APT8018L2VR Ver la hoja de datos (PDF) - Advanced Power Technology

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componentes Descripción

Fabricante

APT8018L2VR

POWER MOS V®

Advanced Power Technology  

DYNAMIC CHARACTERISTICS

APT8018L2VR

Symbol Characteristic

Test Conditions

MIN TYP MAX

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

11020

1090

580

Qg

Total Gate Charge 3

VGS = 10V

530

Qgs

Qgd

AL td(on)

IC tr

N td(off)

H tf

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 0.5 VDSS

55

ID = 0.5 ID[Cont.] @ 25°C

230

VGS = 15V

19

VDD = 0.5 VDSS

17

ID = ID[Cont.] @ 25°C

80

RG = 0.6W

12

E TECTION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

NC A Symbol

VA RM IS

D O ISM

A INF VSD

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])

MIN TYP MAX

43

172

1.3

t rr

Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)

930

Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)

29

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN TYP MAX UNIT

RqJC

RqJA

Junction to Case

Junction to Ambient

0.15

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

3 See MIL-STD-750 Method 3471

temperature.

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

4 Starting Tj = +25°C, L = 3.46mH, RG = 25W, Peak IL = 43A

APT Reserves the right to change, without notice, the specifications and information contained herein.

TO-264 MAXTM(L2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

19.51 (.768)

20.50 (.807)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

0.76 (.030)

1.30 (.051)

2.79 (.110)

3.18 (.125)

5.45 (.215) BSC

2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434

5,256,583 4,748,103 5,283,202

2.29 (.090)

2.69 (.106)

Gate

Drain

Source

5,182,234 5,019,522

5,231,474 5,434,095

5,262,336

5,528,058

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