APT100GF60JU3 Ver la hoja de datos (PDF) - Advanced Power Technology
Número de pieza
componentes Descripción
Fabricante
APT100GF60JU3 Datasheet PDF : 9 Pages
| |||
Typical IGBT Performance Curve
Output characteristics (VGE=15V)
350
250µs Pulse Test
300 < 0.5% Duty cycle
Tc=-55°C
250
Tc=25°C
200
150
100
Tc=125°C
50
0
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
250µs Pulse Test
250 < 0.5% Duty cycle
200
150
100
50
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
1 2 3 4 5 6 7 8 9 10
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
7
TJ = 25°C
250µs Pulse Test
6 < 0.5% Duty cycle
5
Ic=200A
4
3
Ic=100A
2
Ic=50A
1
0
6
8
10
12
14
16
VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
APT100GF60JU3
Output Characteristics (VGE=10V)
300
250µs Pulse Test
250 < 0.5% Duty cycle
Tc=-55°C
200
Tc=25°C
150
100
Tc=125°C
50
0
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
Gate Charge
18
16 IC = 100A
14 TJ = 25°C
12
VCE=120V
VCE=300V
10
8
VCE=480V
6
4
2
0
0 50 100 150 200 250 300 350
Gate Charge (nC)
On state Voltage vs Junction Temperature
4
3.5
Ic=200A
3
2.5
Ic=100A
2
1.5
1 Ic=50A
0.5
0
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-9
Share Link: 