APM4548 Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM4548

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4548K

Absolute

Maximum

Ratings

(T =

A

25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

TJ

TSTG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

VGS=10V (N)

VGS=-10V (P)

PD* Power Dissipation

TA=25°C

TA=100°C

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

N Channel P Channel

30

-30

±20

±20

7

-6

30

-20

1.2

-1

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static Characteristics

BVDSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a

Drain-Source

Resistance

On-State

VGS=0V, IDS=250µA

VGS=0V, IDS=-250µA

VDS=24V, VGS=0V

TJ=85°C

VDS=-24V, VGS=0V

TJ=85°C

VDS=VGS, IDS=250µA

VDS=VGS, IDS=-250µA

VGS=±20V, VDS=0V

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

VGS=10V, IDS=7A

VGS=-10V, IDS=-6A

VGS=4.5V, IDS=5A

VGS=-4.5V, IDS=-5A

N-Ch

P-Ch

N-Ch

P-Ch

APM4548K

Unit

Min. Typ. Max.

30

V

-30

1

30

µA

-1

-30

1 1.5 2

V

-1 -1.5 -2

±100

±100 nA

18 24

32 42

mΩ

23 30

42 55

Copyright © ANPEC Electronics Corp.

2

Rev. B.1 - Sep., 2005

www.anpec.com.tw

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