APM4538K
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Diode Characteristics
VSDa Diode Forward Voltage
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
ISD=1.7A, VGS=0V
ISD=-1.7A, VGS=0V
VGS=0V,VDS=0V,F=1MHz
N-Channel
VGS=0V,
VDS=25V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-25V,
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V,
IDS=5A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-4A
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4538K
Unit
Min. Typ. Max.
0.8 1.3
V
-0.8 -1.3
2.8
Ω
11
450
770
65
pF
120
25
80
10 15
10 20
8
20
15 30
ns
20 28
25 50
5
15
15 30
15 21
26 35
4.5
nC
5.1
2.1
3.3
Copyright ANPEC Electronics Corp.
3
Rev. B.1 - Mar., 2005
www.anpec.com.tw