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MT28F320A18

FLASH MEMORY

Micron Technology 

PRELIMINARY

2 MEG x 16

1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY

GENERAL DESCRIPTION

The MT28F320A18 is a nonvolatile electrically

block-erasable (Flash) memory containing eight 4K-

word parameter blocks and sixty-three 32K-word main

blocks.

The MT28F320A18 allows soft protection for blocks,

as read only, by configuring soft protection registers

with dedicated command sequences. For security pur-

poses, a 128-bit chip protection register is provided.

The embedded WORD WRITE and BLOCK ERASE

functions are fully automated by an on-chip write state

machine (WSM). An on-chip status register can be

used to monitor the WSM status and to determine the

progress of the PROGRAM/ERASE task.

The ERASE/PROGRAM SUSPEND functionality

allows compatibility with existing EEPROM emulation

software packages.

The device is manufactured using 0.15µm process

technology.

Please refer to Micron’s Web site (www.micron.com/

flash) for the latest data sheet.

ARCHITECTURE AND MEMORY

ORGANIZATION

The MT28F320A18 contains eight 4K-word parame-

ter blocks and sixty-three 32K-word main blocks.

Figure 2 and Figure 3 show the bottom and top

memory organizations for the 32Mb device.

DEVICE MARKING

Due to the size of the package, Micron’s standard

part number is not printed on the top of each device.

Instead, an abbreviated device mark comprised of a

five-digit alphanumeric code is used. The abbreviated

device marks are cross referenced to Micron part num-

bers in Table 1.

Table 1: Cross Reference for Abbreviated Device Marks

PART NUMBER

MT28F320A18FF-70 BET

MT28F320A18FF-70 TET

PRODUCT

MARKING

FW722

FW723

SAMPLE

MARKING

FX722

FX723

MECHANICAL

SAMPLE

MARKING

FY722

FY723

2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory

MT28F320A18_3.fm - Rev. 3, Pub. 9/2002

2

©2002, Micron Technology Inc.

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