APM4500K Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM4500K

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM4500

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM

PD

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

Maximum Power Dissipation

TA=25°C

TA=100°C

TJ

Maximum Junction Temperature

TSTG Storage Temperature Range

RθjA Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

N-Channel P-Channel

20

-20

±12

±12

8

-4.3

35

-17

2.5

2.5

1.0

1.0

150

-55 to 150

62.5

Unit

V

A

W

°C

°C

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250µA

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

Ra

DS(ON)

Drain-Source On-state

Resistance

VSDa Diode Forward Voltage

VDS=16V , VGS=0V

VDS=-16V , VGS=0V

VDS=VGS , IDS=250µA

VDS=VGS , IDS=-250µA

VGS=±12V , VDS=0V

VGS=±12V , VDS=0V

VGS=4.5V , IDS=8A

VGS=2.5V , IDS=5.2A

VGS=-4.5V , IDS=-4.3A

VGS=-2.5V , IDS=-2A

ISD=1.7A , VGS=0V

ISD=-1.25A , VGS=0V

Notes

a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

APM4500

Min. Typ. Max.

Unit

N-Ch 20

P-Ch -20

N-Ch

P-Ch

V

1

-1 µA

N-Ch 0.5 0.7 1

V

P-Ch -0.45

-1

N-Ch

P-Ch

±100 nA

±100

N-Ch

P-Ch

22 26

30 36

80 90 mΩ

105 115

N-Ch

P-Ch

0.8 1.3 V

-0.7 -1.3

Copyright  ANPEC Electronics Corp.

2

Rev. A.2 - May., 2003

www.anpec.com.tw

Share Link: