APM4431KC-TR Ver la hoja de datos (PDF) - Anpec Electronics

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componentes Descripción

Fabricante

APM4431KC-TR

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM4431K

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Gate Charge Characteristicsb

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=-15V, VGS=-10V,

IDS=-5.3A

Notes:

a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

APM4431K

Unit

Min. Typ. Max.

27.4 35

5

nC

4.1

Copyright  ANPEC Electronics Corp.

3

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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