APM4430K
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V = 10V
GS
1.6 I = 12.5A
DS
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0
R @T =25oC:
ON
j
4.5mΩ
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
50
10
T =150oC
j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source - Drain Voltage (V)
7000
6000
Capacitance
Frequency=1MHz
5000
Ciss
4000
3000
2000
1000
0
0
Coss
Crss
5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
Gate Charge
10
V =15V
DS
9 I =12.5A
D
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
6
Rev. B.2 - Apr., 2005
www.anpec.com.tw