APM9953K
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V = -10V
GS
I = -3A
1.6 DS
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0
R @T =25oC:
ON
j
76mΩ
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
10
T =150oC
j
T =25oC
j
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD - Source-Drain Voltage (V)
Capacitance
800
Frequency=1MHz
640
Ciss
480
320
160
Crss
0
0
4
Coss
8
12
16
20
-VDS - Drain-Source Voltage (V)
Gate Charge
5
V = -10V
DS
I = -3A
DS
4
3
2
1
0
0
1
2
3
4
5
6
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
6
Rev. B.1 - Mar., 2005
www.anpec.com.tw