APM9953K(2003) Ver la hoja de datos (PDF) - Anpec Electronics

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componentes Descripción

Fabricante

APM9953K
(Rev.:2003)

P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM9953

Absolute Maximum Ratings Cont. (TA = 25°C unless otherwise noted)

Symbol

PD

TJ

TSTG

RθJA*

Parameter

Maximum Power Dissipation TA=25°C

TA=100°C

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance – Junction to Ambient

Rating

2.5

1.0

150

-55 to 150

62.5

Unit

W

°C

°C

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=-250µA

IDSS

VGS(th)

IGSS

Zero Gate Voltage Drain

Current

Gate Threshold Voltage

Gate Leakage Current

VDS=-16V , VGS=0V

VDS=VGS , IDS=-250µA

VGS=±8V , VDS=0V

RDS(ON)=

Drain-Source On-state

Resistance

VGS=-10V , IDS=-3A

VGS=-4.5V , IDS=-2A

VSD= Diode Forward Voltage

Dynamic>

ISD=-0.5A , VGS=0V

Qg Total Gate Charge

VDS=-10V , IDS=-3A

Qgs

Qgd

td(ON)

Tr

td(OFF)

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

VGS=-4.5V

VDD=-10V , IDS=-3A ,

VGEN=-4.5V , RG=6Ω

Tf Turn-off Fall Time

Ciss Input Capacitance

VGS=0V

Coss Output Capacitance

VDS=-15V

Crss Reverse Transfer Capacitance Frequency=1.0MHz

Notes

a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

b : Guaranteed by design, not subject to production testing

APM9953

Unit

Min. Typ. Max.

-20

V

-1

µA

-0.5 -0.7 -1

V

±100 nA

76 100

mΩ

93 125

-0.7 -1.3

V

5.3 6.9

1.04

nC

0.62

13 21.5

36

56

ns

45 69.5

37 57.5

552

118

pF

76

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - July., 2003

www.anpec.com.tw

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