APM9932CK
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8
V = 4.5V
GS
1.6
I = 9A
DS
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0
R @T =25oC: 12mΩ
ON
j
25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
20
10
T =150oC
j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
2000
1600
1200
Capacitance
Frequency=1MHz
Ciss
800
400 Crss
Coss
0
0
4
8
12
16
20
VDS - Drain - Source Voltage (V)
Gate Charge
10
V =10 V
DS
I =6A
D
8
6
4
2
0
0
5 10 15 20 25 30
QG - Gate Charge (nC)
Copyright ANPEC Electronics Corp.
6
Rev. B.2 - Apr., 2005
www.anpec.com.tw