APM9932CK Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9932CK

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9932CK

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS Drain-Source Voltage

VGSS Gate-Source Voltage

ID*

Continuous Drain Current

9

IDM*

300µs Pulsed Drain Current

30

IS*

Diode Continuous Forward Current

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD* Power Dissipation

TA=25°C

TA=100°C

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

N Channel P Channel

20

-20

±16

±12

9

-6

30

-20

1.5

-1.2

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Static Characteristics

BVDSS

Drain-Source Breakdown

Voltage

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current

RDS(ON) a

Drain-Source On-State

Resistance

VSDa Diode Forward Voltage

Test Condition

VGS=0V, IDS=250µA

VGS=0V, IDS=-250µA

VDS=16V, VGS=0V

VDS=-16V, VGS=0V

VDS=VGS, IDS=250µA

VDS=VGS, IDS=-250µA

VGS=±16V, VDS=0V

VGS=±12V, VDS=0V

VGS=4.5V, IDS=9A

VGS=-4.5V, IDS=-6A

VGS=2.5V, IDS=6A

VGS=-2.5V, IDS=-4A

ISD=1.5A, VGS=0V

ISD=-1.2A, VGS=0V

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

APM9932CK

Unit

Min. Typ. Max.

20

V

-20

1

µA

-1

0.55 0.7 1.5

V

-0.45 -0.6 -1

±100

±100 nA

12 18

30 45

mΩ

18 27

50 65

0.75 1.3

V

-0.8 -1.3

Copyright  ANPEC Electronics Corp.

2

Rev. B.2 - Apr., 2005

www.anpec.com.tw

Share Link: