APM9930 Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9930

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9930/C

Typical Characteristics (Cont.)

P-Channel

Source-Drain Diode Forward Voltage

10

1

TJ=150°C

TJ=25°C

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSD -Source-to-Drain Voltage (V)

Single Pulse Power

80

60

40

20

0

0.01

0.1

1

10 30

Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

1

Duty Cycle=0.5

D=0.2

D=0.1

0.1

D=0.05

D=0.02

0.01

1E-4

SINGLE PULSE

1E-3

1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W

3.TJM-TA=PDMZthJA

0.01

0.1

1

Square Wave Pulse Duration (sec)

10

30

Copyright  ANPEC Electronics Corp.

9

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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