APM9930 Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9930

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9930/C

Typical Characteristics

P-Channel

Output Characteristics

10

-VGS=4,5,6,7,8,9,10V

8

6

-VGS=3V

4

2

0

0

2

4

6

8

10

-VDS - Drain-to-Source Voltage (V)

Transfer Characteristics

10

8

TJ=25°C

TJ=125°C

TJ=-55°C

6

4

2

0

0

1

2

3

4

5

-VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature

1.50

-IDS=250uA

1.25

1.00

0.75

0.50

0.25

0.00

-50 -25 0 25 50 75 100 125 150

Tj - Junction Temperature (°C)

On-Resistance vs. Drain Current

0.10

0.09

0.08

-VGS=4.5V

0.07

0.06

-VGS=10V

0.05

0.04

0.03

0

1

2

3

4

5

6

-ID - Drain Current (A)

Copyright  ANPEC Electronics Corp.

7

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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