APM9930 Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9930

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9930/C

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

VSDa Diode Forward Voltage

Dynamica

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

td(ON) Turn-on Delay Time

Tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

Tf Turn-off Fall Time

Test Condition

ISD=5A , VGS=0V

ISD=-2A , VGS=0V

N-Channel

VDS=10V , IDS= 6A

VGS=4.5V

P-Channel

VDS=-10V , IDS=-1A

VGS=-4.5V

N-Channel

VDD=10V , IDS=1A ,

VGEN=4.5V , RG=10Ω

P-Channel

VDD=-10V , IDS=-1A ,

VGEN=-4.5V , RG=10Ω

Ciss Input Capacitance

Coss Output Capacitance

VGS=0V

VDS=15V

Frequency=1.0MHz

Crss Reverse Transfer Capacitance

N-Ch

P-Ch

APM9930/C

Min. Typ. Max.

0.6

1.3

-0.6

-1.3

Unit

V

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

14 22

6.8 16

5

nC

3.6

2.8

1.08

6 12

21 42

5 10

45 85

ns

16 40

36 80

5 20

20 40

1225

495

330

pF

130

220

60

Notes

a : Guaranteed by design, not subject to production testing

Copyright  ANPEC Electronics Corp.

3

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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