APM9930 Ver la hoja de datos (PDF) - Anpec Electronics

Número de pieza

componentes Descripción

Fabricante

APM9930

Dual Enhancement Mode MOSFET (N-and P-Channel)

Anpec Electronics 

APM9930/C

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current – Continuous

Maximum Drain Current – Pulsed

PD Maximum Power Dissipation

TA=25°C

TA=100°C

TJ

Maximum Junction Temperature

TSTG Storage Temperature Range

RθjA Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

N-Channel

20

P-Channel

-20

±12

±12

15

-5

30

-10

2.5

2.5

1.0

1.0

150

-55 to 150

50

Unit

V

A

W

°C

°C

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

Static

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250µA

IDSS

Zero Gate Voltage Drain

Current

VGS(th) Gate Threshold Voltage

VDS=18V , VGS=0V

VDS=-18V , VGS=0V

VDS=VGS , IDS=250µA

VDS=VGS , IDS=-250µA

IGSS Gate Leakage Current

VGS=±12V , VDS=0V

VGS=±10V , VDS=0V

VGS=10V , IDS=15A

VGS=4.5V , IDS=5A

Drain-Source On-state

Ra

DS(ON)

Resistance

VGS=2.5V , IDS=2A

VGS=-10V , IDS=-5A

VGS=-4.5V , IDS=-3.2A

VGS=-2.5V , IDS=-1A

Notes

a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

APM9930/C

Unit

Min. Typ. Max.

N-Ch 20

P-Ch -20

N-Ch

P-Ch

N-Ch 0.6

P-Ch -0.6

N-Ch

P-Ch

N-Ch

P-Ch

V

1

µA

-1

1.3 V

-1.3

±100 nA

±100

12 15

17 20

25 30

mΩ

60 70

72 80

98 105

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - Sep., 2002

www.anpec.com.tw

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