APM2307
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.5
-ID=3A
0.4
0.3
0.2
0.1
0.0
0
2
4
6
8
10
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.00
-VGS=10V
1.75 -ID=3A
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
10
-VDS=10V
9 -ID=3A
8
7
6
5
4
3
2
1
0
012345678
QG - Gate Charge (nC)
Capacitance
800
700
600
Ciss
500
400
300
200
Coss
100
Crss
0
0
5
10 15 20 25 30
-VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
4
Rev. A.3 - Jun., 2003
www.anpec.com.tw