APM2301CAAC-TR Ver la hoja de datos (PDF) - Anpec Electronics
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APM2301CAAC-TR Datasheet PDF : 10 Pages
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APM2301CA
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
VDSS
VGSS
ID *
IDM *
IS *
TJ
TSTG
PD *
RθJA *
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
VGS=-4.5V
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
TA =25°C
TA =100°C
Thermal Resistance-Junction to Ambient
Notes: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Rating
-20
±12
-2.8
b
-12
-1.3
150
-55 to 150
0.83
0.3
150
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS=0V, IDS=250µA
VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS= VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-2.8A
RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A
VSD a Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=-1.8V, IDS=-1A
ISD=-1.3A, VGS=0V
VDS=-10V, VGS=-4.5V,
IDS=-2.8A
APM2301CA
Unit
Min. Typ. Max.
-20
V
-1
µA
-30
-0.5 -0.75 -1
V
±10 µA
56 70
85 115 mΩ
106 165
-0.75 -1.3 V
7
10
1.9
nC
1.9
Copyright © ANPEC Electronics Corp.
2
Rev. A.1 - Jun., 2006
www.anpec.com.tw
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