HYM362140GS-60 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYM362140GS-60

2M x 36-Bit Dynamic RAM Module

Infineon Technologies 

2M x 36-Bit Dynamic RAM Module

HYM 362140S/GS-60/-70

Advanced Information

• 2 097 152 words by 36-bit organization

(alternative 4 194 304 words by 18-bit)

• Fast access and cycle time

60 ns access time

110 ns cycle time (-60 version)

70 ns access time

130 ns cycle time (-70 version)

• Fast page mode capability with

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 6952 mW active (-60 version)

max. 6292 mW active (-70 version)

CMOS – 132 mW standby

TTL – 264 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• 12 decoupling capacitors mounted on

substrate

• All inputs, outputs and clocks fully TTL

compatible

• 72 pin Single in-Line Memory Module with

31.75 mm height

• Utilizes eight 1M × 1-DRAMs and sixteen

1M × 4 DRAMs in 300 mil SOJ-packages

• 1024 refresh cycles / 16 ms

• Tin-Lead contact pads (S - version)

• God contact pads (GS - version)

Ordering Information

Type

HYM 362140S-60

Ordering Code

Q67100-Q955

Package

L-SIM-72-8

HYM 362140S-70

Q67100-Q954 L-SIM-72-8

HYM 362140GS-60

Q67100-Q957 L-SIM-72-8

HYM 362140GS-70

Q67100-Q956 L-SIM-72-8

Description

DRAM Module

(access time 60 ns)

DRAM Module

(access time 70 ns)

DRAM Module

(access time 60 ns)

DRAM Module

(access time 70 ns)

Semiconductor Group

601

05.94

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