APL502J Ver la hoja de datos (PDF) - Advanced Power Technology

Número de pieza

componentes Descripción

Fabricante

APL502J

LINEAR MOSFET

Advanced Power Technology  

APL502J

500V 52A 0.090Ω

LINEAR MOSFET

Linear Mosfets are optimized for applications operating in the Linear

region where concurrent high voltage and high current can occur at

near DC conditions (>100 msec).

ISOTOP®

"UL Recognized"

• Higher FBSOA

• Popular SOT-227 Package

• Higher Power Dissipation

D

G

S

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol Parameter

APL502J

UNIT

VDSS

ID

IDM

VGS

VGSM

PD

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

500

52

208

±30

±40

568

4.55

Volts

Amps

Volts

Watts

W/°C

TJ,TSTG

TL

IAR

EAR

EAS

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

-55 to 150

300

52

50

3000

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions / Part Number

MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)

500

ID(ON) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)

52

RDS(ON) Drain-Source On-State Resistance 2 (VGS = 12V, 26A)

IDSS

Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)

IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

2

0.09

25

250

±100

4

Volts

Amps

Ohms

µA

nA

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Share Link: