AP9962GMA Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
AP9962GMA Datasheet PDF : 4 Pages
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AP9962GMA
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=16A
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ±20V
ID=20A
VDS=30V
VGS=4.5V
VDS=20V
ID=20A
RG=3.3Ω,VGS=10V
RD=1Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
40 -
-
V
- 0.02 - V/℃
-
- 20 mΩ
-
- 30 mΩ
0.8 - 2.5 V
- 20 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 14 22 nC
-
3
- nC
-
9
- nC
-
8
- ns
- 48 - ns
- 23 - ns
-
7
- ns
- 1160 1860 pF
- 165 - pF
- 110 - pF
- 1.5 2.25 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 31 - ns
- 25 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
2/4
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