AP50L02P Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
Número de pieza
componentes Descripción
Fabricante
AP50L02P Datasheet PDF : 6 Pages
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AP50L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=20A
VGS=4.5V, ID=10A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=25V, VGS=0V
VDS=20V, VGS=0V
VGS= ± 20V
ID=20A
VDS=20V
VGS=5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
25 -
-
V
- 0.037 - V/℃
-
- 17 mΩ
-
- 35 mΩ
1
-
3V
- 10 -
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 11.5 - nC
- 2.1 - nC
- 8.4 - nC
-
7
- ns
- 60 - ns
- 17 - ns
-
9
- ns
- 390 - pF
- 245 - pF
- 100 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.26V
Tj=25℃, IS=40A, VGS=0V
Min. Typ. Max. Units
-
- 40 A
-
- 140 A
-
- 1.26 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
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