2302GN Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
Número de pieza
componentes Descripción
Fabricante
2302GN Datasheet PDF : 4 Pages
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AP2302GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=3.6A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=2.5V, ID=3.1A
VDS=VGS, ID=250uA
VDS=5V, ID=3.6A
VDS=20V, VGS=0V
VDS=20V ,VGS=0V
VGS=±12V
ID=3.6A
VDS=10V
VGS=4.5V
VDS=10V
ID=3.6A
RG=6Ω,VGS=5V
RD=2.8Ω
VGS=0V
VDS=10V
f=1.0MHz
20 -
-
V
- 0.1 - V/℃
-
- 85 mΩ
-
- 115 mΩ
0.5 - 1.2 V
-
6
-
S
-
-
1 uA
-
- 10 uA
-
- ±100 nA
- 4.4 - nC
- 0.6 - nC
- 1.9 - nC
- 5.2 - ns
- 37 - ns
- 15 - ns
- 5.7 - ns
- 145 - pF
- 100 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode )1
VSD
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
IS=1.6A, VGS=0V
Min. Typ. Max. Units
-
-
1A
-
- 10 A
-
- 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
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