AOD450 Ver la hoja de datos (PDF) - Unspecified

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AOD450

N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AOD450

N-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in inverter, load switching and general purpose applications.

Features

VDS (V) = 200V

ID = 3.8A (VGS = 10V)

RDS(ON) <0.7Ω (VGS = 10V)

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

TC=25°C

Current

TC=100°C

ID

Pulsed Drain Current C

IDM

Avalanche Current C

IAR

Repetitive avalanche energy L=1.35mH C EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum

200

±30

3.8

2.7

10

3

6

25

12.5

2.1

1.3

-55 to 175

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

Maximum Junction-to-Case B

t ≤ 10s

Steady-State

Steady-State

Symbol

RθJA

RθJC

Typ

17.1

50

4

Max

30

60

6

Units

V

V

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

1/6

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