AOD403L(V2) Ver la hoja de datos (PDF) - Unspecified

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AOD403L
(Rev.:V2)

P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AOD403

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD403 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and low

gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

high current load applications. Standard Product AOD403 is Pb-free (meets ROHS & Sony 259

specifications). AOD403L is a Green Product ordering option. AOD403 and AOD403L are

electrically identical.

Features

VDS (V) = -30V

ID = -85A (VGS = -20V)

RDS(ON) < 6mΩ (VGS = -20V)

RDS(ON) < 7.6mΩ (VGS = -10V)

TO-252

D-PAK

D

Top View

Drain Connected

to Tab

GD S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

TA=25°C G

Current B,G

TA=100°C B

ID

Pulsed Drain Current

IDM

Avalanche Current C

IAR

Repetitive avalanche energy L=0.1mH C

EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

G

S

Maximum

-30

±25

-85

-65

-200

-30

120

100

50

2.5

1.6

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

13

39

20

50

Maximum Junction-to-Case C

Steady-State

RθJL

0.56

1.5

Units

V

V

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

1/4

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