AOT264L Ver la hoja de datos (PDF) - Alpha and Omega Semiconductor
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AOT264L Datasheet PDF : 6 Pages
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AOT264L/AOB264L
60V N-Channel MOSFET
General Description
Product Summary
The AOT264L/AOB264L combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 6V)
100% UIS Tested
100% Rg Tested
60V
140A
< 3.2mΩ
< 3.5mΩ
(< 3.0mΩ∗)
(< 3.3mΩ∗)
Top View
TO220
Bottom View
D
D
TO-263
Top View
D2PAK
Bottom View
D
D
D
G DS
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G
Maximum
60
±20
140
110
480
19
15
100
500
333
167
2.1
1.3
-55 to 175
G
G
S
S
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.35
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev0 : Dec 2010
www.aosmd.com
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