AO4912L Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Fabricante

AO4912L

Dual N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO4912

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=55°C

0.003 1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±12V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1 1.5 2 V

ID(ON)

On state drain current

VGS=4.5V, VDS=5V

25

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=7.0A

TJ=125°C

20 26

mΩ

31.6 38

VGS=4.5V, ID=6.0A

24.3 31 mΩ

gFS

Forward Transconductance

VDS=5V, ID=7A

22

S

VSD

Diode Forward Voltage

IS=1A

0.78 1 V

IS

Maximum Body-Diode Continuous Current

3A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

590 710 pF

162

pF

40

pF

0.45 0.6 Ω

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery time

Qrr

Body Diode Reverse Recovery charge

VGS=4.5V, VDS=15V, ID=7.0A

VGS=10V, VDS=15V, RL=2.2Ω,

RGEN=3Ω

IF=7A, dI/dt=100A/µs

IF=7A, dI/dt=100A/µs

6.04 7.3 nC

1.46

nC

2.56

nC

3.7 5.5 ns

3.5 5.5 ns

14.9 22 ns

2.5 4 ns

21.2 26 ns

14.2 21 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

Rev 4 : Aug 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

3/8

www.freescale.net.cn

Share Link: