AO4912L Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
AO4912L Datasheet PDF : 8 Pages
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AO4912
Parameter: Thermal Characteristics MOSFET Q1 Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
48
74
Maximum Junction-to-Lead C
Steady-State
RθJL
35
Parameter: Thermal Characteristics MOSFET Q2 Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
48
74
Maximum Junction-to-Lead C
Steady-State
RθJL
35
Thermal Characteristics Schottky
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
47.5
71
Maximum Junction-to-Lead C
Steady-State
RθJL
32
Max
62.5
110
40
Max
62.5
110
40
62.5
110
40
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 4: Aug 2005
Units
°C/W
Units
°C/W
°C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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