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AO4629

30V Complementary MOSFET

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AO4629

30V Complementary MOSFET

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25

-10V

20

15

10

5

-5V

-8V

-4.5V

-4V

VGS=-3.5V

30

25

VDS=-5V

20

15

10

125°C

5

25°C

0

0

1

2

3

4

5

-VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

80

70

VGS=-4.5V

60

50

40

30

VGS=-10V

20

10

0

2

4

6

8

-ID (A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage (Note E)

1.8

1.6

VGS=-10V

ID=-5.5A

1.4

17

5

1.2

2

VGS=-4.5V 10

1

ID=-4.5A

0.8

0

25 50 75 100 125 150 175

Temperature (°C) 0

Figure 4: On-Resistan(cNeotves.EJ) unction18Temperature

120

ID=-5.5A

100

80

60

125°C

40

25°C

20

2

4

6

8

10

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

1.0E+02

1.0E+01

40

1.0E+00

1.0E-01

1.0E-02

125°C

25°C

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

7/9

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