AO4629 Ver la hoja de datos (PDF) - Unspecified

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AO4629

30V Complementary MOSFET

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AO4629

30V Complementary MOSFET

General Description

AO4629 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Features

N-Channel

VDS= 30V

ID= 6A (VGS=10V)

RDS(ON)

< 30mΩ (VGS=10V)

< 42mΩ (VGS=4.5V)

P-Channel

-30V

-5.5A (VGS=-10V)

RDS(ON)

< 41mΩ (VGS=-10V)

< 74mΩ (VGS=-4.5V)

D2

D1

Top View

S2 1

G2 2

S1 3

G1 4

8 D2

7

D2

6 D1

5 D1

G2

G1

S2

S1

n-channel

p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol Max n-channel Max p-channel

Drain-Source Voltage

VDS

30

-30

Gate-Source Voltage

VGS

±20

±20

Continuous Drain

TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

6

-5.5

ID

5

-4.5

IDM

30

-25

IAS, IAR

10

17

EAS, EAR

5

14

TA=25°C

Power Dissipation B TA=70°C

2

2

PD

1.3

1.3

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

Units

V

V

A

A

mJ

W

°C

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

48

74

Maximum Junction-to-Lead

Steady-State

RθJL

32

Max

Units

62.5

°C/W

90

°C/W

40

°C/W

1/9

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