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AO4627

30V Complementary MOSFET

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AO4627

30V Complementary MOSFET

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

TJ=55°C

1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

±100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS，ID=250µA

1.5

2

2.5

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

25

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=4.5A

TJ=125°C

39

50

mΩ

63

78

VGS=4.5V, ID=3A

50

68

mΩ

gFS

Forward Transconductance

VDS=5V, ID=4.5A

10

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.79 1

V

IS

Maximum Body-Diode Continuous Current

2.5

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

135 170 210

pF

25

35

45

pF

13

23

33

pF

1.7 3.5 5.3

Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

4.05 5

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=4.5A

2

3

nC

0.55

nC

Qgd

Gate Drain Charge

1

nC

tD(on)

Turn-On DelayTime

4.5

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=3.3Ω,

1.5

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

18.5

ns

tf

Turn-Off Fall Time

15.5

ns

trr

Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs

7.5 10

ns

Qrr

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs

2.5

nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

2/9

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