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AO4616
(Rev.:2011)

30V Complementary MOSFET

Alpha and Omega Semiconductor 

AO4616

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

-10V

-7V

50

-5V

40

-4.5V

30

20

-3.5V

10

VGS=-3V

0

0

1

2

3

4

5

-VDS (Volts)

Fig 1: On-Region Characteristics (Note E)

40

VDS=-5V

30

20

125°C

10

25°C

0

0

1

2

3

4

5

-VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

40

35

30

VGS=-4.5V

25

20

VGS=-10V

15

1.6

VGS=-10V

1.4

ID=-7A

17

1.2

5

2

1

VIDG=S-=3-.54A.150V

10

0

5

10

15

20

-ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage (Note E)

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

0

Figure

4:

On-Resistance vs. Junction

(Note E)

Tem1p8erature

60

ID=-7A

50

40

30

25°C

20

125°C

10

2

4

6

8

10

-VGS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

(Note E)

1.0E+02

1.0E+01

40

1.0E+00

1.0E-01

1.0E-02

125°C

25°C

1.0E-03

1.0E-04

1.0E-05

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 2: Jan. 2011

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