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AN504 Ver la hoja de datos (PDF) - Vishay Semiconductors

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AN504 Datasheet PDF : 12 Pages
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AN504
Vishay Siliconix
Logic
Control
RS
VIN
Q
Input
CGS1
RDS1
CGS3
IS(on)
CGS2
RDS2
CGS4 RDS4
CGD4
Output
ID(on)
RL
Q
Logic
Control
Q
Input
FIGURE 3. On-State Model
CGS1
CGS2
Substrate (V–)
CGS4
CGD4
Output
CGS3
RS
IS(on)
VIN
RDS3
RL
ID(on)
Q
Note: Individual drain-source capacitances not shown for clarity.
Substrate (V–)
FIGURE 4. Off-State Model
Figures 3 and 4 show low-frequency models of an “on”
channel and an “off” channel, respectively. The models allow
us to visualize the effects of leakage, low-frequency
transmission loss, and analog overvoltage on the overall
circuit performance. The term “low-frequency” is used for the
models because they use single components to represent the
characteristics of the channel. In other words, components
distributed over an area of silicon are lumped together for
simplicity’s sake. An accurate high-frequency model of an “on”
channel demands a more complex RC network (more on this
later).
www.vishay.com S FaxBack 408-970-5600
6-2
Leakage-Generated Offsets
Depending on the value of source and load impedances
connected to input and output, leakage-generated offset
voltages can be obtained using Ohms Law. In practice,
however, the DG884 will be used surrounded by fast linear
circuitry whose bias currents will be much higher than the
nanoampere leakage currents of the D/CMOS process. Thus,
offset voltages will be dominated by the external circuitry
around the crosspoint and not the DG884.
Document Number: 70610
05-Aug-99

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