GTL2010PW Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

GTL2010PW

Bi-directional low voltage translators

Philips Electronics 

Cross-Bar Technology (CBT) Like Behavior

The large NMOS pass transistors used in the GTL-TVC devices are very similar to the large NMOS pass transistors used

in CBT devices. However unlike the CBT devices that use internal drivers to control the gate of the NMOS pass

transistor, the gate pin of the GTL-TVC devices is directly connected to the gate of each transistor. In principle the

GTL-TVC devices can be used like CBT devices except that the gate input capacitance is much larger than a normal

CBT device. When using the GTL-TVC devices as CBT devices, the gate pin (GREF) is driven by external logic to the

power supply, to enable it, or to ground to disable it, and the SREF and DREF pins can be used as an additional channel

as shown in Figure 3.

VDD

Chip set

GTL2002

GND GREF

SREF DREF

S1 D1

S2 D2

Control

5V

VDD

Chipset I/O

Figure 3. Cross Bar Technology like Application

Note: If a 5 V to 3.3 V translation is wanted, best results are achieved using the bias circuit of the GTL-TVC with the

SREF at 3.3 V. Additionally, when used as a CBT function with the gate at VDD and the input at VDD, the maximum pass

voltage will be ~ VDD – 1 V because the output is shifted down by a threshold compared to the gate voltage.

Features

The GTL-TVC family has several features that benefit a system designer when designing an interface between devices

with different I/O voltage levels.

Device Construction – The GTL-TVC devices are of a very simple design. The only required connections are GND,

gate of the reference transistor (GREF), drain of the reference transistor (DREF) and source of the reference transistor

(SREF) and then any of the Dn/Sn I/O pairs needed for voltage level translations.

• Any transistor Dn or Sn I/O pair can be used as the source or drain of the reference transistor (SREF or DREF). This

makes it easier to route signals to and from the device.

• All the transistors are on one die, which is manufactured with very tight process control. This provides a very low

spread of VO relative to SREF or DREF.

• It is easy to change the SREF voltage allowing the system designer an easy migration path to even lower voltages

(e.g. 1.5 V or 1.2 V).

• Dn /Sn I/O pairs are matched on either side of the devices (e.g., flow through pinout) which offers easy trace

routing.

No Active Control Logic – As shown in Figure 4, the GTL-TVC is a passive device and there is no active control logic.

This means there is no supply power (VDD) required for device operation.

Figure 4. GTL20XX Logic Diagram

5

Share Link: