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DS1820

1–Wire™ Digital Thermometer

Dallas Semiconductor -> Maxim Integrated 

DS1820

1–WIRE CRC CODE Figure 7

INPUT

(MSB)

XOR

XOR

(LSB)

XOR

MEMORY

The DS1820’s memory is organized as shown in

Figure 8. The memory consists of a scratchpad RAM

and a nonvolatile, electrically erasable (E2) RAM, which

stores the high and low temperature triggers TH and TL.

The scratchpad helps insure data integrity when com-

municating over the 1–Wire bus. Data is first written to

the scratchpad where it can be read back. After the data

has been verified, a copy scratchpad command will

transfer the data to the nonvolatile (E2) RAM. This pro-

cess insures data integrity when modifying the memory.

The scratchpad is organized as eight bytes of memory.

The first two bytes contain the measured temperature

information. The third and fourth bytes are volatile

copies of TH and TL and are refreshed with every pow-

er–on reset. The next two bytes are not used; upon

reading back, however, they will appear as all logic 1’s.

The seventh and eighth bytes are count registers, which

may be used in obtaining higher temperature resolution

(see “Operation–measuring Temperature” section).

There is a ninth byte which may be read with a Read

Scratchpad command. This byte contains a cyclic

redundancy check (CRC) byte which is the CRC over all

of the eight previous bytes. This CRC is implemented in

the fashion described in the section titled “CRC Genera-

tion”.

DS1820 MEMORY MAP Figure 8

SCRATCHPAD

TEMPERATURE LSB

TEMPERATURE MSB

TH/USER BYTE 1

TL/USER BYTE 2

RESERVED

RESERVED

COUNT REMAIN

COUNT PER °C

BYTE

0

1

2

3

4

5

6

7

E2 RAM

TH/USER BYTE 1

TL/USER BYTE 2

CRC

8

030598 8/27

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