CXK582000M Ver la hoja de datos (PDF) - Sony Semiconductor

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CXK582000M

262144-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

Data retention waveform

• Low supply voltage data retention waveform (1) (CE1 control)

tCDRS

Data retention mode

tR

VCC

4.5V

2.2V

VDR

CE1

GND

CE1 ≥ VCC – 0.2V

• Low supply voltage data retention waveform (2) (CE2 control)

VCC

4.5V

CE2

VDR

Data retention mode

tCDRS

tR

0.4V

GND

CE2 ≤ 0.2V

CXK582000TM/YM/M

Data Retention Characteristics

Item

Symbol

Test conditions

Min.

Data retention voltage VDR ∗

2.0

0 to +70°C

—

Data retention current

ICCDR1 VCC = 3.0V∗1

0 to +40°C

—

+25°C

—

ICCDR2 VCC = 2.0 to 5.5V∗

—

Data retention setup time tCDRS Chip disable to data retention mode

0

Recovery time

tR

5

∗ CE1 ≥ Vcc – 0.2V, CE2 ≥ Vcc – 0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)

(Ta = 0 to +70°C)

Typ. Max. Unit

—

5.5 V

—

24

—

4.8 µA

0.8

2.4

1.4

40 µA

—

— ns

—

— ms

–9–

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