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Fabricante

CXK582000M

262144-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

DC Recommended Operating Conditions

Item

Symbol Min.

Supply voltage

VCC

4.5

Input high voltage

VIH

2.2

Input low voltage

VIL

–0.3∗

∗ VIL = –3.0V Min. for pulse width less than 50ns.

(Ta = 0 to +70°C, GND = 0V)

Typ.

Max. Unit

5.0

5.5

V

—

VCC + 0.3 V

—

0.8

V

CXK582000TM/YM/M

Electrical Characteristics

• DC Characteristics

(VCC = 5V ± 10%, GND = 0V, Ta = 0 to +70°C)

Item

Input leakage current

Symbol

Test conditions

ILI

VIN = GND to VCC

Min. Typ.∗ Max. Unit

–1

—

+1 µA

Output leakage current

ILO

CE1 = VIH or CE2 = VIL or

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

+1 µA

Operating power supply

current

ICC1

ICC2

Average operating current

ICC3

CE1 = VIL, CE2 = VIH

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

duty = 100%

IOUT = 0mA

Cycle time 1µs

duty = 100%

IOUT = 0mA

CE1 ≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

-85LLX

-10LLX

—

7

15 mA

—

45

80

mA

—

40

70

—

12

24 mA

Standby current

Output high voltage

Output low voltage

CE2 ≤ 0.2V

0 to +70°C

—

—

40

ISB1

{or

CE1 ≥ Vcc – 0.2V 0 to +40°C

CE2 ≥ Vcc – 0.2V

+25°C

—

—

—

1.4

8 µA

4

ISB2

CE1 = VIH or CE2 = VIL

—

0.6

3 mA

VOH

IOH = –1.0mA

2.4

—

—V

VOL

IOL = 1.0mA

—

—

0.4 V

∗ VCC = 5V, Ta = 25°C

–3–

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