CXK5B41020TM-12 Ver la hoja de datos (PDF) - Sony Semiconductor

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componentes Descripción

Fabricante

CXK5B41020TM-12

262144-word × 4-bit High Speed Bi-CMOS Static RAM

Sony Semiconductor 

CXK5B41020TM

Electrical Characteristics

DC Characteristics

Item

Input leakage current

Output leakage current

Average operating current

Standby current

Output high voltage

Output low voltage

∗ Vcc = 3.3V, Ta = 25°C

Symbol

(Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)

Conditions

Min. Typ.∗ Max Unit

ILI

VIN = GND to VCC

–10

—

+10 µA

CE = VIH or

ILO

OE = VIH or

WE = VIL

VI/O = GND to VCC

–10

—

+10 µA

Cycle: Min.

Duty = 100%

ICC

IOUT = 0mA

CE = VIL

VIN = VIH or VIL

—

—

220 mA

CE ≥ VCC – 0.2V

ISB1

VIN ≥ VCC – 0.2V or

VIN ≤ 0.2V

—

—

10 mA

Cycle: Min.

ISB2

Duty = 100%

CE = VIH

VIN = VIH or VIL

—

—

100 mA

VOH IOH = –2.0mA

2.4

—

—

V

VOL

IOL = 2.0mA

—

—

0.4

V

I/O Capacitance

Item

Symbol

Conditions

Input capacitance

CIN

VIN = 0V

I/O capacitance

CI/O

VI/O = 0V

Note) This parameter is sampled and is not 100% tested.

(Ta = 25°C, f = 1MHz)

Min.

Typ.

Max Unit

—

—

5

pF

—

—

7

pF

AC Characteristics

• AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C)

Item

Condition

Input pulse high level

Input pulse low level

VIH = 3.0V

I/O

VIL = 0.0V

Input rise time

tr = 2ns

Input fall time

tf = 2ns

Input and output reference level 1.4V

Output load conditions

Fig. 1

Output load (1)

Zo=50Ω

Output Load (2)∗1

3.3V

I/O

RL=50Ω

1179Ω

VL=1.4V

5pF∗2

868Ω

∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ

∗2. Including scope and jig capacitances

Fig. 1

–3–

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