DNB64 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DNB64

Rectifier Diode

Dynex Semiconductor 

DNB64

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRRM

Peak reverse current

QS

Total stored charge

IRR

Peak recovery current

trr

Reverse recovery time

V

Threshold voltage

TO

rT

Slope resistance

CURVES

10000

Measured under

pulse conditions

8000

6000

4000

Tj = 25˚C

Tj = 175˚C

Conditions

At 1500A peak, Tcase = 25oC

At VRRM, Tcase = 175oC

IF = 1000A, dIRR/dt = 5A/µs

Tcase = 125˚C, VR = 100V

At T = 175˚C

vj

At Tvj = 175˚C

Typ. Max. Units

-

1.1

V

-

100 mA

4000 -

µC

150

-

A

30

-

µs

-

0.86

V

-

0.2 mΩ

10000

8000

dc

Half wave

6000

3 phase

6 phase

4000

2000

2000

0

0

0

1.0

2.0

3.0

0

Instantaneous forward voltage, VF - (V)

2000

4000

Mean forward current, IF(AV) - (A)

6000

Fig.2 Maximum (limit) forward characteristics

Fig.3 Dissipation curves

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = 0.506497

B = 0.070975

C = 0.000219

D = –0.00553

these values are valid for Tj = 125˚C for IF 500A to 10000A

4/7

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