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HYB514256B-60

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM

Infineon Technologies 

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K × 4-DRAM

DC Characteristics (cont’d)

TA = 0 to 70 ˚C; VSS = 0 V; VCC = 5 V ± 10 %

Parameter

Average VCC supply current, fast page mode:

-60 version

-70 version

-50 version

(RAS = VIL , CAS, address cycling:

tPC = tPC min.)

Standby VCC supply current

L-Version

(RAS = CAS = VCC – 0.2 V)

Average VCC supply current, CAS-before-RAS

refresh mode:

-50 version

-60 version

-70 version

(RAS, CAS cycling: tRC = tRC min.)

For L-version only:

Battery backup current:

average power supply current,

battery backup mode:

(CAS = CAS before RAS cycling or 0.2 V,

OE = VCC – 0.2 V

WE = VCC – 0.2 V or 0.2 V,

A0 to A8 = VCC – 0.2 V or 0.2 V,

I/O1 to I/O4 = VCC – 0.2 V or 0.2 V or open,

tRC = 125 µs, tRAS = tRAS min. ~ 1 µs)

Symbol Limit Values

min.

max.

ICC4

–

70

–

60

–

50

ICC5

–

1

–

200

ICC6

–

90

–

80

–

70

ICC7

–

300

Unit Test

Condition

mA 2) 3

mA 2) 3)

mA 2) 3)

mA 1)

µA 1)

mA 2)

mA 2)

mA 2)

2)

µA

Semiconductor Group

60

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