HYB514256BJ Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYB514256BJ

256 K × 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM

Infineon Technologies 

HYB 514256B/BL/BJ/BJL-50/-60/-70

256 K × 4-DRAM

The HYB 514256B/BJ/BL/BJL is the new generation dynamic RAM organized as 262 144 words by

4-bit. The HYB 514256B/BJ/BL/BJL utilizes CMOS silicon gate process technology as well as

advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 514256B/BJ/BL/BJL to be packaged in a standard

plastic P-DIP-20-2,or plastic P-SOJ-26/20-1. This package size provides high system bit densities

and is compatible with commonly used automatic testing and insertion equipment. System oriented

features include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic

device families such as Schottky TTL. These HYB 514256BL/BJL are specially selected for battery

backup applications.

Pin Definitions and Functions

Pin No.

A0-A8

RAS

OE

I/O1-I/O4

CAS

WE

VCC

VSS

N.C.

Function

Address Inputs

Row Address Strobe

Output Enable

Data Input/Output

Column Address Strobe

Read/Write Input

Power Supply (+ 5 V)

Ground (0 V)

No Connection

Semiconductor Group

56

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