HYB314171BJ Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

HYB314171BJ

3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Siemens AG 

HYB 314171BJ/BJL-50/-60/-70

3.3V 256 K x 16-DRAM

DC Characteristics (cont’d)

Parameter

Average VCC supply current during

fast page mode operation: -50 version

-60 version

-70 version

Symbol Limit Values

min.

max.

–

ICC4

70

65

60

Unit Notes

2, 3, 4

mA

Standby VCC supply current

ICC5

–

(RAS = LCAS = UCAS = WE = VCC – 0.2 V)

Average VCC supply current during

–

CAS-before-RAS refresh mode:

-50 version

ICC6

-60 version

-70 version

1

mA 1

2, 4

125

mA

105

85

Standby VCC current (L-version)

ICC5

–

(RAS = LCAS = UCAS = WE= VCC – 0.2 V)

Self Refresh Current (L-version)

(RAS, LCAS, UCAS = 0.2 V

A0 – A8 = VCC – 0.2 V or 0.2 V)

ICCS

–

200

µA

250

µA

Capacitance

TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A8)

CI1

–

6

pF

Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2

–

7

pF

Output capacitance (l/O1 to l/O16)

CIO

–

7

pF

Semiconductor Group

6

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