UT8R256K1615TBDCX Ver la hoja de datos (PDF) - Aeroflex UTMC

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componentes Descripción

Fabricante

UT8R256K1615TBDCX

256K x 16 SRAM

Aeroflex UTMC 

DATA RETENTION CHARACTERISTICS (Pre and Post-Radiation)

(TC = 25°C, VDD2 = VDD2 (min), 1 Sec DR Pulse)

SYMBOL

PARAMETER

VDR

VDD1 for data retention

IDDR 1

Data retention current

tEFR 1,2

Chip deselect to data retention time

tR1,2

Operation recovery time

MINIMUM

1.0

--

0

tAVAV

MAXIMUM

--

10

UNIT

V

µA

ns

ns

DATA RETENTION MODE

VDD1

VIN >0.7VDD2 CMOS

E2

1.7V

tEFR

VDR > 1.0V

VSS

1.7V

ENT tR

E1

VIN <0.3VDD2 CMOS

188 ohms

Notes:

50pF

VDD2

M Figure 5. Low VDD Data Retention Waveform

ELOP 1.5V

CMOS

VDD2-0.05V

0.0V

DEV <2ns

Input Pulses

90%

< 2ns

10%

IN 1. 50pF including scope probe and test socket.

2. Measurement of data output occurs at the low to high or high to low transition mid-point

(i.e., CMOS input = V DD2 /2).

Figure 6. AC Test Loads and Input Waveforms

11

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