AM0912-150 Ver la hoja de datos (PDF) - Advanced Semiconductor
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AM0912-150 Datasheet PDF : 1 Pages
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AM0912-150
RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM0912-150 is a Common
Base Transistor Designed for TCAS
and JTIDS Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
• Gold Metallization
• Hermetic Package
• Input/Output Matching
MAXIMUM RATINGS
IC
16.5 A
VCC
35 V
P
DISS
300 W @ TC = ≤ 100 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
0.57 °C/W
PACKAGE - .400 X .500 2L FLG
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCBO
BVCES
BVEBO
ICES
hFE
IC = 60 mA
IC = 100 mA
IE = 10 mA
VCB = 35 V
VCE = 5.0 V
IC = 5.0 A
POUT
PG
ηC
VCC = 35 V f = 960 to 1215 MHz PIN = 26.7 W
MINIMUM TYPICAL MAXIMUM
55
55
3.5
25
20
300
330
7.0
7.4
38
45
UNITS
V
V
V
mA
---
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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