DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PDM41256SA10TA Ver la hoja de datos (PDF) - Paradigm Technology

Número de pieza
componentes Descripción
Fabricante
PDM41256SA10TA
Paradigm-Technology
Paradigm Technology Paradigm-Technology
PDM41256SA10TA Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PDM41256
Low VCC Data Retention Waveform
Data Retention Mode
1
V CC
4.5V
4.5V
VDR
t CDR
tR
2
VIH
CE VIL
VDR
3
DON'T CARE
4
5
Data Retention Electrical Characteristics (LA Version Only)
Symbol Parameter
VDR
ICCDR
VCC for Retention Data
Data Retention Current
tCDR
tR(4)
Chip Deselect to Data Retention Time
Operation Recovery Time
Test Conditions
Min.
2
Typ.
Max. Unit
V
6
CE VCC – 0.2V
VIN VCC – 0.2V
or 0.2V
VCC = 2V
95
500 µA
VCC = 3V
0
350
750 µA
ns
7
tRC
ns
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
8
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
9 5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage
6. Vcc = 5V ± 5%.
10
11
12
Rev. 4.4 - 4/29/98
7

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]