ALD1110E Ver la hoja de datos (PDF) - Advanced Linear Devices
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ALD1110E Datasheet PDF : 10 Pages
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OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
Parameter
ALD1108E
Symbol Min Typ
Max
ALD1110E
Min
Typ
Max
Transconductance
gm
1.4
1.4
Unit
mA/V
Transconductance Match
∆gm
25
25
µA/V
Low Level Output
Conductance
High Level Output
Conductance
Drain Off Leakage Current
gOL
gOH
ID(OFF)
6
68
5
400
4
6
µA/V
68
µA/V
5
400 pA
4 nA
Gate Leakage Current
IGSS
10
100
1
10
100 pA
1 nA
Input Capacitance
CISS
25
Cross Talk
60
25
pF
60
dB
Relaxation Time Constant
tRLX
2
2
Hours
Relaxation Voltage
VRLX
-0.3
-0.3
%
Test
Conditions
VD = 10V,VG =Vt + 4.0
VD = 10V,VG =Vt + 4.0
VG = Vt +0.5V
VG = Vt +4.0V
TA = 125°C
TA = 125°C
f = 100KHz
1.0V ≤ Vt ≤ 3.0V
PROGRAMMING CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
Parameter
ALD1108E
Symbol Min Typ
Max
Programmable Vt Range
Vt
1.000
3.000
ALD1110E
Min
Typ
1.000
Max
3.000
Unit
V
Test
Conditions
Resolution of Vt
Programming
RV t
0.1
1
0.1
1 mV
Change in Vt Per
Programming Pulse
∆Vt / N
0.5
0.05
0.5
0.05
mV/ pulse Vt = 1.0V
Vt = 2.5V
Programming Voltage
Programming Current
Pulse Frequency
Vp
11.75
Ip
ƒ pulse
12.00 12.25 11.75 12.00 12.25 V
2
2
mA
50
50
KHZ
ALD1108E/ALD1110E
Advanced Linear Devices
4
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