BAS21T Ver la hoja de datos (PDF) - Diodes Incorporated.
Número de pieza
componentes Descripción
Fabricante
BAS21T Datasheet PDF : 5 Pages
| |||
BAS21T
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 6)
Average Rectified Output Current (Note 6)
Non-Repetitive Peak Forward Surge Current
Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
IFRM
Value
250
200
141
400
200
2.5
0.5
625
Unit
V
V
V
mA
mA
A
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RϴJA
TJ, TSTG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 7)
Forward Voltage
Reverse Current @ Rated DC Blocking Voltage (Note 7)
Total Capacitance
Reverse Recovery Time
Symbol Min
V(BR)R
250
VF
IR
CT
trr
Max
1.0
1.25
100
15
5.0
50
Unit
V
V
nA
µA
pF
ns
Test Condition
IR = 100ΩA
IF = 100mA
IF = 200mA
TJ = 25°C
TJ = 100°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 × IR, RL = 100Ω
Notes:
6. Device mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html.
IFM, IO are valid provided that terminals are kept at ambient temperature.
7. Short duration pulse test used to minimize self-heating effect.
BAS21T
Document number: DS30264 Rev. 11 - 2
2 of 5
www.diodes.com
June 2018
© Diodes Incorporated
Share Link: 