BUL65B Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

Número de pieza

componentes Descripción

Fabricante

BUL65B

ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

Semelab - > TT Electronics plc  

SEME

LAB

MECHANICAL DATA

Dimensions in mm

6.40 (0.252)

6.78 (0.267)

5.21 (0.205)

5.46 (0.215)

123

2.18 (0.086)

2.44 (0.096)

0.84 (0.033)

0.94 (0.037)

1.09 (0.043)

1.30 (0.051)

5.97 (0.235)

6.22 (0.245)

0.76 (0.030)

1.14 (0.045)

0.64 (0.025)

0.89 (0.035)

8.89 (0.350)

9.78 (0.385)

BUL65B

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

Designed for use in

electronic ballast applications

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

2.31

(0.091)

Typ.

2.31

(0.091)

Typ.

4.60 (0.181)

Typ.

0.46 (0.018)

0.61 (0.024)

1.04 (0.041)

1.14 (0.045)

Pin 1 – Base

I-PAK (TO251)

Pad 2 – Collector Pad 3 – Emitter

FEATURES

• Multi–base for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage(IE=0)

500V

VCEO

Collector – Emitter Voltage (IB = 0)

250V

VEBO

Emitter – Base Voltage (IC = 0)

10V

IC

Continuous Collector Current

8A

IC(PK)

Peak Collector Current

12A

IB

Base Current

3A

Ptot

Total Dissipation at Tcase = 25°C

20W

Tstg

Operating and Storage Temperature Range

–55 to +150°C

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 2/97

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