DN3525N8-G Ver la hoja de datos (PDF) - Supertex Inc
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DN3525N8-G Datasheet PDF : 5 Pages
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DN3525
Thermal Characteristics
Package
TO-243AA
ID
(continuous)1
360mA
ID
(pulsed)
1.0A
Power Dissipation
@TA = 25OC
1.6W2
Θjc (OC/W)
15
Θja (OC/W)
782
Notes:
1. I (continuous) is limited by max rated T .
D
j
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
IDR1
360mA
IDRM
1.0A
Electrical Characteristics (@25OC unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units Conditions
BVDSX Drain-to-source breakdown voltage
250
-
-
V
VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source OFF voltage
-1.5
-
-3.5
V
VDS = 15V, ID = 1.0mA
ΔVGS(OFF) Change in VGS(OFF) with temperature
-
-
4.5 mV/OC VDS = 15V, ID = 1.0mA
IGSS Gate body leakage current
-
-
100
nA VGS = ±20V, VDS = 0V
ID(OFF) Drain-to-source leakage current
-
-
1.0
µA VDS = Max rating, VGS = -5.0V
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = -5.0V, TA = 125OC
IDSS Saturated drain-to-source current
300
-
-
mA VGS = 0V, VDS = 15V
RDS(ON)
Static drain-to-source ON-state
resistance
-
-
6.0
Ω
VGS = 0V, ID = 200mA
ΔRDS(ON) Change in RDS(ON) with temperature
-
-
1.1
%/OC VGS = 0V, ID = 200mA
GFS Forward transconductance
225
-
-
mmho VDS = 10V, ID = 150mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
270 350
VGS = -5.0V,
-
20
60
pF VDS = 25V,
-
5.0
20
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
-
-
-
-
20
-
25
-
25
VDD = 25V,
ns
ID = 150mA,
RGEN = 25Ω,
-
-
40
VGS = 0V to -10V
VSD Diode forward voltage drop
-
-
1.8
V
VGS = -5.0V, ISD = 150mA
trr
Notes:
Reverse recovery time
-
800
-
ns VGS = -5.0V, ISD = 150mA
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2
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