IXTK120N25 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTK120N25 Datasheet PDF : 5 Pages
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IXTK 120N25
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
Characteristic values
Min. Typ. Max.
65
98
S
Ciss
7700
pF
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1700
pF
Crss
600
pF
td(on)
35
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
38
ns
td(off)
RG = 1.5 Ω (External)
175
ns
tf
35
ns
Qg(on)
Qgs
Qgd
360
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
63
nC
180
nC
RthJC
RthCK
0.15
0.17 K/W
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
120 A
ISM
Repetitive; pulse width limited by TJM
480 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5 V
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100V
Qrr
350
ns
4
µC
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
Inches
Min. Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
1.020
.033
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
IXYS reserves the right to change limits, test conditions, and dimensions.
5,486,715
5,381,025
6,306,728B1
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